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1 June 1991 Preliminary lithographic characteristics of an all-organic chemically amplified resist formulation for single-layer deep-UV lithography
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Abstract
When used in conjunction with a nitrobenzylester photoacid generator, poly(t-butoxycarbonyloxy-styrene-sulfone) deep-UV resist films exhibit high contrast, good resolution and linewidth stability. Use of overcoat materials dramatically reduce the surface inhibition problems, improve the latent image stability (time delay) and enhance the sensitivity by isolating the resist surface from environmental contaminants that react with the photogenerated acid. The photospeed of the all organic CAMP formulation is lower compared to the arsenate based system but can be improved by using more aggressive PEB conditions. Coded, 0.35 micrometers l/s pairs could be resolved in 1 micrometers thick resist films at a dose of 20-30 mJ/cm2. The exposure latitude is approximately equals 25% for 0.5 micrometers features, upon exposure with a GCA prototype deep-UV exposure tool with a NA equals 0.35 and 5x reduction optics. This paper will discuss the resolution, depth-of-focus, exposure latitude and processing characteristics obtained during the evaluation of this chemically amplified resist.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Omkaram Nalamasu, Elsa Reichmanis, May Cheng, Victor Pol, Janet M. Kometani, Francis M. Houlihan, Thomas X. Neenan, M. P. Bohrer, David A. Mixon, Larry F. Thompson, and Clifford H. Takemoto "Preliminary lithographic characteristics of an all-organic chemically amplified resist formulation for single-layer deep-UV lithography", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46355
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