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1 June 1991 Progress in the study of development-free vapor photolithography
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Abstract
Development-free vapor photolithography (DFVP) is a unique all-dry pattern transfer technique and has been successfully used in manufacturing microelectronic devices. It can simultaneously overcome the diffraction limitation and the problems arisen from wet process. In DFVP the etching reaction of SiO2 with gaseous HF occurs at the buried SiO2/polymer film interface. Contrary to the conventional lithography, the photopolymer used in DFVP does not act as a resist but an accelerator. In this paper a proposed mechanism of the etching reaction and explanations of very high resolution, high aspect ratio and the requirement of high exposure dose in DFVP will be presented. In addition, this paper will report the investigation of parameters as the functions of etching rate.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaoyin Hong, Dan Liu, Zhong-Zhe Li, Ji-Quang Xiao, and Gui-Rong Dong "Progress in the study of development-free vapor photolithography", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46403
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