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1 September 1991 High-speed GaAs metal-semiconductor-metal photodetectors with sub-0.1μm finger width and finger spacing
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Abstract
We have fabricated metal-semiconductor-metal photodetectors with sub-100 nm finger spacing and finger width on MBE-grown GaAs, which are, to our knowledge, the smallest ever reported. Dc measurement shows that they have low dark current and high sensitivity. Monte- Carlo simulations demonstrate that the response time of the photodetectors for a 30 nm finger spacing can be as short as 0.4 ps, and the cut-off frequency can be over 1 THz.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen Y. Chou, Mark Y. Liu, and Paul B. Fischer "High-speed GaAs metal-semiconductor-metal photodetectors with sub-0.1μm finger width and finger spacing", Proc. SPIE 1474, Optical Technology for Signal Processing Systems, (1 September 1991); https://doi.org/10.1117/12.44928
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