1 July 1991 Comparison of MESFET and HEMT MMIC technologies using a compact Kaband voltage-controlled oscillator
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Abstract
To compare the capability of MESFET and HEMT technologies for monolithic microwave integrated circuit (MMIC) implementation we have fabricated and tested discrete field-effect transistors (FETs) and a novel Ka-band monolithic voltage controlled oscillator (VCO). We implemented the circuit with three different active devices: moderate- and high-doped ion-implanted MESFETs (metal-semiconductor FETs) and AlGaAs/GaAs HEMTs (high electron mobility transistors). A comparison of the measured oscillator phase-noise and an independent comparison of the temperature dependence of MESFET and HEMT RF equivalent circuits yields two general guidelines: MESFETs are preferred over HEMTs for applications requiring low phase-noise and temperature insensitive operation.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stan E. Swirhun, John J. Geddes, Vladimir Sokolov, David R. Bosch, M. J. Gawronski, Robert Anholt, "Comparison of MESFET and HEMT MMIC technologies using a compact Kaband voltage-controlled oscillator", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44508; https://doi.org/10.1117/12.44508
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KEYWORDS
Field effect transistors

Oscillators

Temperature metrology

Ka band

Integrated circuits

Microwave radiation

Transistors

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