1 July 1991 Coplanar SIMMWIC circuits
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Using silicon as the substrate material SIMMWIC (Silicon Monolithic Millimeter Wave Integrated Circuit) oscillators and receivers are successfully realized. For the coplanar oscillators a slot is used as the resonant structure in which a monolithically integrated IMPATT diode selectively grown by Silicon molecular beam epitaxy (Si-MBE) acts as the negative resistance device. Pulsed and CW operation of the planar oscillators is achieved in the 90 GHz region. The output power is either radiated from a planar Vivaldi antenna or directly from the resonant slot. Complete receivers with monolithic Schottky diodes together with the antenna are integrated on a single chip.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johann-Freidrich Luy, Karl M. Strohm, and J. Buechler "Coplanar SIMMWIC circuits", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44488; https://doi.org/10.1117/12.44488

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