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1 July 1991 Effects of radiation on millimeter wave monolithic integrated circuits
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Abstract
Radiation damage to high-electron-mobility transistor (HEMT) structures, and its effect on electrical characteristics, are discussed. Radiation from cobalt 60 gamma and nuclear reactor sources was used on microwave and millimeter-wave monolithic circuits to determine total dose sensitivity. Heavy ions (15-MeV silicon) were used to evaluate other potential damage mechanisms. The dc and RF results for a 60-GHz-band monolithic microwave integrated circuit (MMIC) before and after irradiation are presented. The HEMT structures were found to be as resistant to radiation as previously tested metal-semiconductor field-effect transistors (MESFETs), and no new damage mechanisms were observed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew Meulenberg Jr., Hing-Loi A. Hung, J. L. Singer, and Wallace T. Anderson Jr. "Effects of radiation on millimeter wave monolithic integrated circuits", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); https://doi.org/10.1117/12.44506
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