High-efficiency Kaband monolithic pseudomorphic HEMT amplifier

Paul Saunier; Hua Quen Tserng; Yung Chung Kao

doi:10.1117/12.44483

1 July 1991 High-efficiency Kaband monolithic pseudomorphic HEMT amplifier

Paul Saunier, Hua Quen Tserng, Yung Chung Kao

Proceedings Volume 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems; (1991) https://doi.org/10.1117/12.44483
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

A monolithic three-stage Ka-band amplifier has been designed and fabricated on a doped channel heterostructure. Devices with gate length of 0.2 micron and gate width of 50, 100, and 250 micron were cascaded. The gate and drain bias networks were also integrated. The small signal gain is 31 dB and the amplifier is capable of an output power of 190 mW with 23 dB gain and 30.2 percent power added efficiency at 31 GHz. This is a record efficiency for a multistage MMIC at this frequency.

Citation Download Citation

Paul Saunier, Hua Quen Tserng, and Yung Chung Kao "High-efficiency Kaband monolithic pseudomorphic HEMT amplifier", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); https://doi.org/10.1117/12.44483

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