1 July 1991 Insertion of emerging GaAs HBT technology in military and communication system applications
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Abstract
This paper presents design and test results of balanced I-band amplifiers realized using GaAs HBT and MESFET technology. Their performance comparison in terms of linearity figure of merit demonstrates that the HBT MMICs can provide high third-order intercept point (IP3) with low dc power consumption. It also provides simplified system architecture requiring only a single dc supply voltage.
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Bridget A. McAdam, Bridget A. McAdam, Arvind K. Sharma, Arvind K. Sharma, Barry R. Allen, Barry R. Allen, M. Kintis, M. Kintis, } "Insertion of emerging GaAs HBT technology in military and communication system applications", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44504; https://doi.org/10.1117/12.44504
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