1 July 1991 Low-noise MMIC performance in Kaband using ion implantation technology
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The progress made in producing low noise MMICs in Ka-band using an ion-implantation technology is reviewed. The technology is characterized by 3.8 dB noise figure with 14-16 dB gain and is suitable for high volume applications where the cost is to be kept low.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Mondal, J. P. Mondal, T. Contolatis, T. Contolatis, John J. Geddes, John J. Geddes, Stan E. Swirhun, Stan E. Swirhun, Vladimir Sokolov, Vladimir Sokolov, } "Low-noise MMIC performance in Kaband using ion implantation technology", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44510; https://doi.org/10.1117/12.44510

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