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1 July 1991 Low-noise MMIC performance in Kaband using ion implantation technology
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Abstract
The progress made in producing low noise MMICs in Ka-band using an ion-implantation technology is reviewed. The technology is characterized by 3.8 dB noise figure with 14-16 dB gain and is suitable for high volume applications where the cost is to be kept low.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Mondal, T. Contolatis, John J. Geddes, Stan E. Swirhun, and Vladimir Sokolov "Low-noise MMIC performance in Kaband using ion implantation technology", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); https://doi.org/10.1117/12.44510
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