1 July 1991 Phased-array receiver development using high-performance HEMT MMICs
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A set of HEMT MMICs including LNAs and phase shifters has been developed for an all-HEMT 20 GHz phased array receiver applications. These MMICs use state-of-the-art HEMT devices for low noise figure, innovative design techniques for compactness, and proven wafer processing for high yield. The LNA achieved a noise figure of 2.5 dB with an associated gain of 22 dB. The 3-bit phase shifter achieved 6 to 7.8 dB insertion loss for all states. With their performance and high process yield, these MMIC chips can be inserted into a system to demonstrate the next generation phased array performance.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Louis Liu, Louis Liu, William L. Jones, William L. Jones, R. Carandang, R. Carandang, Wayne W. Lam, Wayne W. Lam, J. Yonaki, J. Yonaki, Dwight C. Streit, Dwight C. Streit, R. Kasody, R. Kasody, } "Phased-array receiver development using high-performance HEMT MMICs", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44495; https://doi.org/10.1117/12.44495


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