1 July 1991 Quasioptical MESFET VCOs
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Abstract
A gate feedback oscillator is presented which is motivated by the geometry of the monolithic MESFET device, with a monolithically integrated oscillator in GaAs. This power combining, solid state oscillator can be used as a microwave and millimeter wave source, and in most applications it needs to be tunable in both power and frequency. The tuning can be performed with a separate wafer loaded with varactor diodes, that has an electrically variable reflection coefficient, and is equivalent to a tuning short. Phase control is carried out using optical injection-locking. A single MESFET microstrip oscillator is demonstrated that is optically injection locked at 5 GHz. To characterize the nonlinearity of the device, electrooptic sampling of the gate-source voltage has been performed inside the GaAs FET in a microstrip oscillator and the saturation level has been determined at different bias points.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Scott Bundy, Scott Bundy, Tom Mader, Tom Mader, Zoya Popovic, Zoya Popovic, Reinold Ellinson, Reinold Ellinson, Dag Roar Hjelme, Dag Roar Hjelme, Marc R. Surette, Marc R. Surette, Michael J. Yadlowsky, Michael J. Yadlowsky, Alan Rolf Mickelson, Alan Rolf Mickelson, } "Quasioptical MESFET VCOs", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44511; https://doi.org/10.1117/12.44511
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