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1 July 1991 Ultra-high-frequency InP-based HEMTs for millimeter wave applications
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Abstract
InP-based (AlInAs/GaInAs) high electron mobility transistors (HEMTs) have demonstrated a substantial performance improvement over GaAs-based devices. HEMTs with extrinsic f(T) over 200 GHz, fmax over 300 GHz, and amplifiers with extremely low noise figures and high associated gain have been achieved. A review of the status of this device technology and projections for high performance microwave and millimeter-wave applications will be discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul T. Greiling and Loi D. Nguyen "Ultra-high-frequency InP-based HEMTs for millimeter wave applications", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); https://doi.org/10.1117/12.44477
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