Paper
1 July 1991 Comparative study for bolometric and nonbolometric switching elements for microwave phase shifters
Massood Tabib-Azar, Kul B. Bhasin, Robert R. Romanofsky
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Abstract
The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Massood Tabib-Azar, Kul B. Bhasin, and Robert R. Romanofsky "Comparative study for bolometric and nonbolometric switching elements for microwave phase shifters", Proc. SPIE 1477, Superconductivity Applications for Infrared and Microwave Devices II, (1 July 1991); https://doi.org/10.1117/12.45600
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Cited by 1 scholarly publication.
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KEYWORDS
Switches

Microwave radiation

Superconductors

Phase shifts

Resistance

Infrared radiation

Semiconductors

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