1 July 1991 Epitaxial films YBa2Cu3O7-delta(jc(78K)<106A/cm2) on sapphire and SrTiO3: peculiarities and differences in conditions of film growth and properties
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Abstract
The influence of technological parameters at laser deposition on YBa2Cu3O7_5 films properties, including parameters of a laser beam, oxygen pressure, substrate temperature, target-substrate distance are discussed. The relationship between optimal values of these parameters and the relationship of microstructure and transport properties of the films are shown. The importance of the initial growth stage epitaxial YBa2Cu3O7_5 films on sapphire substrate with jc(78K) < 106A/cm2 is discussed. The influence of dynamics of laser plasma expansion on film growth is demonstrated.
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Mikhail R. Predtechensky, A. N. Smal', Yury D. Varlamov, "Epitaxial films YBa2Cu3O7-delta(jc(78K)<106A/cm2) on sapphire and SrTiO3: peculiarities and differences in conditions of film growth and properties", Proc. SPIE 1477, Superconductivity Applications for Infrared and Microwave Devices II, (1 July 1991); doi: 10.1117/12.45616; https://doi.org/10.1117/12.45616
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