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1 August 1991 Effective electron mass in narrow-band-gap IR materials under different physical conditions
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In this paper we have studied the effective electron mass in infrared materials under various quantiations of band states (e.g. under magnetic quantization, cross—field configuration, size quanti— zation, quantum wells under cross—field configuration, quantum wires electric field aided quantum wires, magnetic field aided QWs, cross— field configuration of QWs, QWVvs and electric field aided QWWs 4Lüv eleetron energy spe ctra in the re spe ctive ease S. We have also forniu— 1 a te d the ele c tro n s ta ti s ti Cs fo r the Pu rpo se o f s tu dying the do ping dependences of effective electron mass under the said conditions. We have plotted the effective mass with various physical variables, t aki rig n—Hg1CdTe a s an e x arnpl e whi c1 al so fi n d s e x ten si ye appl i Ca— tions as IR compounds and photovoltaic detector arrays. It is found that the effective masses increase with increasing electron concen— tration, oscillate with magnetic field and film thickness in various manners. The effective masses become juantui number dependent under crossed electric and magnetic field, quantuni wells under cross—field configurations and electric field aided quantum wires. The theoreti— cal results are in agreement with the experimental observations as given elsewhere. In addition, the eorsponding results of two—band Kane model and that of parabolic energy bands have been obtained from our generalized expressions as special cases under certain limiting condi tions.
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Kamakhya Prasad Ghatak and Shambhu Nath Biswas "Effective electron mass in narrow-band-gap IR materials under different physical conditions", Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991);

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