1 August 1991 Electronic and optical properties of silicide/silicon IR detectors
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Abstract
Responsivity measurements of silicide/silicon IR detectors, i.e., PtSi/Si and IrSi/Si, are interpreted by physical models for photoemission. The quantum yield for photoemission is composed of the optical absorption and the electrical emission yield across the Schottky barrier. For thin (2-6 nm) silicide films, the IR responsivity is enhanced by diffuse wall scattering of charge carriers at the interfaces. The enhancement is high near the long wavelength cut-off of the detector and decreases to shorter wavelengths due to inelastic scattering of mobile carriers for increasing photoexcitation energy. The electronic properties of the PtSi/Si interface are also characterized by scanning tunneling micrographs and tunneling spectroscopy. The results indicate a smooth and continuous film with a disordered interface which is created by interdiffusion of the components at elevated temperatures for silicide formation. Interdiffusion increases the emission barrier and reduces the responsivity.
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Wolfgang A. Cabanski, Wolfgang A. Cabanski, Max J. Schulz, Max J. Schulz, } "Electronic and optical properties of silicide/silicon IR detectors", Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); doi: 10.1117/12.46510; https://doi.org/10.1117/12.46510
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