Growth of CdTe-CdMnTe heterostructures by molecular beam epitaxy

Robert N. Bicknell-Tassius

doi:10.1117/12.46502

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1 August 1991 Growth of CdTe-CdMnTe heterostructures by molecular beam epitaxy

Robert N. Bicknell-Tassius

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Proceedings Volume 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches; (1991) https://doi.org/10.1117/12.46502
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

The successful MBE growth of CdMnTe-CdTe heterostructures and superlattices has demonstrated the feasibility of growing layered structures incorporating dilute magnetic semiconductor materials (DMS). These materials exhibit new and interesting properties. These properties allow the band-gap engineering to continue after the structure has been grown through the application of an external magnetic field. During the growth process the engineering can be accomplished through traditional means, i.e., through the choice of layer thickness and/or the choice of the strain state of the structure.

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Robert N. Bicknell-Tassius "Growth of CdTe-CdMnTe heterostructures by molecular beam epitaxy", Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); https://doi.org/10.1117/12.46502

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