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1 September 1991 Heat capacity of MOS field-effect devices of optical materials in the presence of a strong magnetic field
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In this paper, an attempt is made to study the heat capacity of MOS field-effect devices of optical materials under strong magnetic field using ternary compounds and nonlinear optical samples as examples of optical materials. The magneto-heat capacity of ternary materials is formulated in MOSFET by considering the fourth order in effective mass theory and taking into account the inter-actions of the conduction, heavy-hole, light-hole, and the split-off bands, respectively. The same capacity in nonlinear optical materials has also been formulated for the present case on the basis of newly-derived, generalized, 2-D carrier energy spectra by incorporating the anisotropic crystal potential and the Hamiltonian together with the anisotropies of the effective electron mass and the spin-orbit splitting parameter of the valence band for both the weak and strong electric field limits. The authors studied the surface electric field and the magnetic field dependences of the magneto heat capacity in n-channel inversion layers of the said materials taking n-Hg1-XCdXTe and CdGeAs2 as examples for both the limits. It is found that the magneto-heat capacity increases with magnetic field and surface field for both the limits in various types of oscillatory manners for all the cases. The theoretical results are in quantitative agreement with the experimental observation as reported elsewhere. In addition, the corresponding results of the magneto heat capacity for relatively wide-gap optical materials have been obtained from generalized expressions under certain limiting conditions.
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Kamakhya Prasad Ghatak and Shambhu Nath Biswas "Heat capacity of MOS field-effect devices of optical materials in the presence of a strong magnetic field", Proc. SPIE 1485, Reflective and Refractive Optical Materials for Earth and Space Applications, (1 September 1991);

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