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1 March 1991 E-beam data compaction method for large-capacity mask ROM production
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Mask ROMs are one of the most advanced devices commercially available today. 4 Mbit DRAMs are just coming to the market, where 32 Mbit and 64 Mbit Mask ROM products also are entering the market. The code mask of Mask ROM consists, of a random distribution of repeated cells on a constant grid, so it is difficult to use conventional e-beam data compaction techniques for the code mask level of a Mask ROM. As mask ROM capacity and their mask exposure data volumes increase, the e-beam data processing time for these devices also has increased even with enhanced computational speeds of new mainframe computers. To overcome this problem, we have adopted a new e-beam data compaction technique. With this ne technique of a data compaction, data conversion times on a mainframe computer (ACOS) are substantially shorted and data volume is reduced by as much as a factor of one hundred. Using this new data format, the data volume of a variable shaped vector scan e-beam exposure system became far smaller compared with a spot beam raster scan e-beam system.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toyomi Kanemaru, Takashi Nakajima, Tadanao Igarashi, Rika Masuda, and Nobuyuki Orita "E-beam data compaction method for large-capacity mask ROM production", Proc. SPIE 1496, 10th Annual Symp on Microlithography, (1 March 1991);


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