Although full implementation of x-ray lithography as a production technology remains a few years in the future, there are now many world wide efforts to accelerate this introduction. Unlike other more common lithographic techniques, such as image projection, x-rya lithography requires the fabrication of a mask with a thick absorber to efficiently block the X-rays. This important distinction from the reticles used in wafer steppers requires a completely new approach to many of the techniques of mask making, including inspection and repairs. Focused ion beam systems have been suggested as a possible repair strategy, and a number of groups have utilized the inherent advantages of FIB methods to repair X-ray masks in the laboratory. Although FIB systems have achieve substantial acceptance in the photomask making community for repair of chrome masks and reticles, a simple reapplication of these systems to repair of X-ray masks will not produce the quality levels required in X- ray lithography. The purpose of this paper will be to review the primary technical problems in the repair of X-ray masks and to discuss the implications of these requirements on the design of an FIB system. The current state-of-the-art in X-ray mask repair will be reviewed and some unique results will be presented.
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