The development of a high resolution laser lithography tool which utilizes a 0.6 NA 20X reduction lens, 364 nanometer exposure source and a four pass writing strategy provides the opportunity to evaluate an optical lithography tool for mask making that has removed some of the inherent complexity associated with E-Beam exposure systems. No high vacuum system is required and there is no need for grounding of the substrate to dissipate the charge induced by the exposure system. The plates are not carried in individual cassettes and therefore the system performance is not subjected to additive tolerances associated with this method of handling. Freedom from the adverse affects of these sub- systems should appear in the form of a product performance in the areas of registration and defect control. The production capability of the system is analyzed to determine what type of routine performance can be expected in terms of resolution, linewidth control, registration, defect additions and average print times. The primary goal is to determine if the performance in these areas is capable of meeting reticle requirements for 16 megabit design rules which are 0.5 micron geometries on the wafer. The evaluation revealed the basic capability exists, however, additional work must be done in the area of resist/process to achieve viable production performance for linewidth control.