1 March 1991 Proximity effect correction on MEBES for 1x mask fabrication: lithography issues and tradeoffs at 0.25 micron
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Abstract
Proximity effect correction is necessary to fabricate masks with 0.25 micron design rules using electron beam lithography. The GHOST technique of proximity correction has the advantage of no pattern preprocessing and is easily implemented on a raster scan system such as MEBES. Recent results show proximity corrected features at 0.3 micron. To minimize constraints on the resist characteristics, such as the Srg ratio, global sizing of patterns has been investigated and found to provide an additional degree of freedom to control sensitivities and process latitude. Simulation and experimental results will be presented to demonstrate the use of GHOST and sizing for 1X mask making, including discussion of some of the relevant issues and tradeoffs.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew J. Muray, Robert L. Dean, "Proximity effect correction on MEBES for 1x mask fabrication: lithography issues and tradeoffs at 0.25 micron", Proc. SPIE 1496, 10th Annual Symp on Microlithography, (1 March 1991); doi: 10.1117/12.29744; https://doi.org/10.1117/12.29744
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