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1 September 1991 Importance of nonlinear gain in semiconductor lasers
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Proceedings Volume 1497, Nonlinear Optics and Materials; (1991) https://doi.org/10.1117/12.46803
Event: Southcentral '91 (Dallas), 1991, Dallas, TX, United States
Abstract
This paper reviews the importance of nonlinear gain and its impact on the performance of semiconductor lasers. The physical mechanisms which can lead to an intensity dependence of the optical gain in the above-threshold regime are described briefly. A specific nonlinear-gain mechanism, referred to as intraband gain saturation, is discussed in detail by considering its effect on the important laser characteristics such as the modulation bandwidth, intensity noise, and the laser linewidth. Particular attention is paid to the effects of cross saturation in nearly single-mode semiconductor lasers. Even a weak side mode can lead to saturation and rebroadening of the main-mode linewidth due to mode coupling induced by the nonlinear gain.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Govind P. Agrawal and George R. Gray "Importance of nonlinear gain in semiconductor lasers", Proc. SPIE 1497, Nonlinear Optics and Materials, (1 September 1991); https://doi.org/10.1117/12.46803
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