Crystalization kinetics in Ge2Sb2Te5 phase-change recording films

Kenji Ozawa; Shinji Ogino; Yoshikazu Satoh; Tatuo Urushidani; Atsushi Ueda; Hiroshi Deno; Haruo Kawakami

doi:10.1117/12.45932

1 July 1991 Crystalization kinetics in Ge₂Sb₂Te₅ phase-change recording films

Kenji Ozawa, Shinji Ogino, Yoshikazu Satoh, Tatuo Urushidani, Atsushi Ueda, Hiroshi Deno, Haruo Kawakami

Proceedings Volume 1499, Optical Data Storage '91; (1991) https://doi.org/10.1117/12.45932
Event: Optical Data Storage, 1991, Colorado Springs, CO, United States

Abstract

Crystallization kinetics of Ge₂Sb₂Te₅ phase-change recording films were studied through the isothermal annealing test, the static laser annealing test, and the static/dynamic observation by transmission electron micrographs. It has been considered that the crystallization of recorded mark at erasing process dominated by the crystal growth, where the crystalline nuclei had already produced during recording process of the mark.

Citation Download Citation

Kenji Ozawa, Shinji Ogino, Yoshikazu Satoh, Tatuo Urushidani, Atsushi Ueda, Hiroshi Deno, and Haruo Kawakami "Crystalization kinetics in Ge₂Sb₂Te₅ phase-change recording films", Proc. SPIE 1499, Optical Data Storage '91, (1 July 1991); https://doi.org/10.1117/12.45932

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