Translator Disclaimer
1 August 1991 Nonlinear optic in-situ diagnostics of a crystalline film in molecular-beam-epitaxy devices
Author Affiliations +
Proceedings Volume 1506, Micro-Optics II; (1991)
Event: ECO4 (The Hague '91), 1991, The Hague, Netherlands
A new method of film structure in situ monitoring is proposed for MBE (molecular beam epitaxy) and MOCVD technologies. It is based on the analysis of second harmonic (SH) radiation induced in a growing film irradiated by a laser beam. SH intensity measurement versus angle of polarization plane of the incident light and versus film thickness provides the in situ information about film crystal quality, presence of polycrystal component, and crystallographic axes orientation. This method can be complementary to the well-known technique of fast electron diffraction (RHEED) and is supposed to be especially suitable for research groups since it allows a correlation between technological and crystallographic parameters to be quickly determined.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor F. Krasnov, Semion L. Musher, V. I. Prots, Alexander M. Rubenchik, Vladimir E. Ryabchenko, and Mikhail F. Stupak "Nonlinear optic in-situ diagnostics of a crystalline film in molecular-beam-epitaxy devices", Proc. SPIE 1506, Micro-Optics II, (1 August 1991);


Walk-off correction in biaxial crystals
Proceedings of SPIE (November 14 2007)
Nonlinear Optical Properties Of A New Organic Crystal 4...
Proceedings of SPIE (January 14 1990)
Generation of THz and IR radiation in DAST crystals
Proceedings of SPIE (February 27 2006)

Back to Top