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1 August 1991 Nonlinear optic in-situ diagnostics of a crystalline film in molecular-beam-epitaxy devices
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Proceedings Volume 1506, Micro-Optics II; (1991) https://doi.org/10.1117/12.45973
Event: ECO4 (The Hague '91), 1991, The Hague, Netherlands
Abstract
A new method of film structure in situ monitoring is proposed for MBE (molecular beam epitaxy) and MOCVD technologies. It is based on the analysis of second harmonic (SH) radiation induced in a growing film irradiated by a laser beam. SH intensity measurement versus angle of polarization plane of the incident light and versus film thickness provides the in situ information about film crystal quality, presence of polycrystal component, and crystallographic axes orientation. This method can be complementary to the well-known technique of fast electron diffraction (RHEED) and is supposed to be especially suitable for research groups since it allows a correlation between technological and crystallographic parameters to be quickly determined.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor F. Krasnov, Semion L. Musher, V. I. Prots, Alexander M. Rubenchik, Vladimir E. Ryabchenko, and Mikhail F. Stupak "Nonlinear optic in-situ diagnostics of a crystalline film in molecular-beam-epitaxy devices", Proc. SPIE 1506, Micro-Optics II, (1 August 1991); https://doi.org/10.1117/12.45973
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