Intrinsic carrier concentration and effective masses in Hg1-xMnxTe

Antoni Rogalski

doi:10.1117/12.47161

1 September 1991 Intrinsic carrier concentration and effective masses in Hg1-xMnxTe

Antoni Rogalski

Proceedings Volume 1512, Infrared and Optoelectronic Materials and Devices; (1991) https://doi.org/10.1117/12.47161
Event: ECO4 (The Hague '91), 1991, The Hague, Netherlands

Abstract

The intrinsic carrier concentration, electron effective mass ratio, and the reduced Fermi energy are calculated for Hg1-xMnxTe with 0.08 YLD (DOT) pYLD method (Kane model). By fitting the calculated nonparabolic ni values to the expression for parabolic bands, the following approximation for the intrinsic carrier concentration has been obtained: ni equals (4.615 - 1.59x + 0.00264T - 0.0170xT + 34.15x2)1014E3/4T3/2exp(-5802Eg/T) in cm-3, where Eg is in eV.

Citation Download Citation

Antoni Rogalski "Intrinsic carrier concentration and effective masses in Hg1-xMnxTe", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); https://doi.org/10.1117/12.47161

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