1 September 1991 Intrinsic carrier concentration and effective masses in Hg1-xMnxTe
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Abstract
The intrinsic carrier concentration, electron effective mass ratio, and the reduced Fermi energy are calculated for Hg1-xMnxTe with 0.08 YLD (DOT) pYLD method (Kane model). By fitting the calculated nonparabolic ni values to the expression for parabolic bands, the following approximation for the intrinsic carrier concentration has been obtained: ni equals (4.615 - 1.59x + 0.00264T - 0.0170xT + 34.15x2)1014E3/4T3/2exp(-5802Eg/T) in cm-3, where Eg is in eV.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Antoni Rogalski, Antoni Rogalski, } "Intrinsic carrier concentration and effective masses in Hg1-xMnxTe", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); doi: 10.1117/12.47161; https://doi.org/10.1117/12.47161
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