1 September 1991 Intrinsic carrier concentration and effective masses in Hg1-xMnxTe
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The intrinsic carrier concentration, electron effective mass ratio, and the reduced Fermi energy are calculated for Hg1-xMnxTe with 0.08 YLD (DOT) pYLD method (Kane model). By fitting the calculated nonparabolic ni values to the expression for parabolic bands, the following approximation for the intrinsic carrier concentration has been obtained: ni equals (4.615 - 1.59x + 0.00264T - 0.0170xT + 34.15x2)1014E3/4T3/2exp(-5802Eg/T) in cm-3, where Eg is in eV.
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Antoni Rogalski, Antoni Rogalski, } "Intrinsic carrier concentration and effective masses in Hg1-xMnxTe", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); doi: 10.1117/12.47161; https://doi.org/10.1117/12.47161

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