Metal-organic molecular beam epitaxy of II-VI materials

Christopher J. Summers; Brent K. Wagner; Rudolph G. Benz II; Rajesh D. Rajavel

doi:10.1117/12.47159

1 September 1991 Metal-organic molecular beam epitaxy of II-VI materials

Christopher J. Summers, Brent K. Wagner, Rudolph G. Benz II, Rajesh D. Rajavel

Proceedings Volume 1512, Infrared and Optoelectronic Materials and Devices; (1991) https://doi.org/10.1117/12.47159
Event: ECO4 (The Hague '91), 1991, The Hague, Netherlands

Abstract

A brief review is given of the development of a metalorganic molecular beam epitaxial system for Hg-based II-VI semiconductors. Recent results on the growth of HgZnTe, HgCdTe, and iodine-doped CdTe epitaxial layers are presented and demonstrate the potential of this technique for the growth of high-quality materials.

Citation Download Citation

Christopher J. Summers, Brent K. Wagner, Rudolph G. Benz II, and Rajesh D. Rajavel "Metal-organic molecular beam epitaxy of II-VI materials", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); https://doi.org/10.1117/12.47159

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