1 September 1991 Metal-organic molecular beam epitaxy of II-VI materials
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Abstract
A brief review is given of the development of a metalorganic molecular beam epitaxial system for Hg-based II-VI semiconductors. Recent results on the growth of HgZnTe, HgCdTe, and iodine-doped CdTe epitaxial layers are presented and demonstrate the potential of this technique for the growth of high-quality materials.
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Christopher J. Summers, Christopher J. Summers, Brent K. Wagner, Brent K. Wagner, Rudolph G. Benz, Rudolph G. Benz, Rajesh D. Rajavel, Rajesh D. Rajavel, } "Metal-organic molecular beam epitaxy of II-VI materials", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); doi: 10.1117/12.47159; https://doi.org/10.1117/12.47159
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