PbEuSeTe/Pb1-xSnxTe buried heterostructure diode lasers grown by molecular beam epitaxy

Ze'ev Feit; D. Kostyk; R. J. Woods; Paul S. Mak

doi:10.1117/12.47158

1 September 1991 PbEuSeTe/Pb1-xSnxTe buried heterostructure diode lasers grown by molecular beam epitaxy

Ze'ev Feit, D. Kostyk, R. J. Woods, Paul S. Mak

Proceedings Volume 1512, Infrared and Optoelectronic Materials and Devices; (1991) https://doi.org/10.1117/12.47158
Event: ECO4 (The Hague '91), 1991, The Hague, Netherlands

Abstract

Buried heterostructure (BH) PbSnTe lasers were prepared in a two-stage MBE growth. Lasers with Pb1-xSnxTe (xequals0; 0.04; 0.05; 0.068; 0.095) buried active layer and a buried quantum well (BQW) Pb0.932Sn0.068Te active layers have been manufactures. A maximum continuous wave operating temperature of 203 K was recorded for a lattice matched PbTe active layer BH laser, and a maximum operating temperature of 189 K was recorded for the BQW laser.

Citation Download Citation

Ze'ev Feit, D. Kostyk, R. J. Woods, and Paul S. Mak "PbEuSeTe/Pb1-xSnxTe buried heterostructure diode lasers grown by molecular beam epitaxy", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); https://doi.org/10.1117/12.47158

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available