1 September 1991 PbEuSeTe/Pb1-xSnxTe buried heterostructure diode lasers grown by molecular beam epitaxy
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Buried heterostructure (BH) PbSnTe lasers were prepared in a two-stage MBE growth. Lasers with Pb1-xSnxTe (xequals0; 0.04; 0.05; 0.068; 0.095) buried active layer and a buried quantum well (BQW) Pb0.932Sn0.068Te active layers have been manufactures. A maximum continuous wave operating temperature of 203 K was recorded for a lattice matched PbTe active layer BH laser, and a maximum operating temperature of 189 K was recorded for the BQW laser.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ze'ev Feit, Ze'ev Feit, D. Kostyk, D. Kostyk, R. J. Woods, R. J. Woods, Paul S. Mak, Paul S. Mak, } "PbEuSeTe/Pb1-xSnxTe buried heterostructure diode lasers grown by molecular beam epitaxy", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); doi: 10.1117/12.47158; https://doi.org/10.1117/12.47158

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