1 December 1990 Millimeter wave surface impedance and far infrared reflectivity of epitaxially grown high Tc thin films
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Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 151404 (1990) https://doi.org/10.1117/12.2301414
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States
Abstract
Microwave surface impedance data at 87GHz of epitaxially grown thin films of YBa2Cu3O7-δ prepared in situ by excimer laser ablation, dc sputtering, and thermal coevaporation on SrTiO3, MgO, and LaAlO3 are compared. At 77K the lowest surface resistance values were achieved with laser ablated films on SrTiO3. At 4.2 K and low field levels for all preparation techniques and all substrates nearly the same anomalous high residual surface resistance values occur. Both the microwave and the far infrared reflectivity data at 4.2K are described consistently within the two fluid model indicating a large amount of remaining normal conducting charge carriers.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Klein, N. Klein, } "Millimeter wave surface impedance and far infrared reflectivity of epitaxially grown high Tc thin films", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 151404 (1 December 1990); doi: 10.1117/12.2301414; https://doi.org/10.1117/12.2301414
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