1 December 1990 A two-dimensional perturbation technique to model ion-implanted GaAs MESFET for millimeter-wave systems
Author Affiliations +
Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 151417 (1990) https://doi.org/10.1117/12.2301453
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States
Abstract
A perturbation technique is presented to analytically model various electrical characteristics of ion-implanted MESFETs. It involves on the determination of the potential distribution in the irregularly—bounded depletion region under the gate by solving the two-dimensional Poisson's equation.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Donkor, E. Donkor, } "A two-dimensional perturbation technique to model ion-implanted GaAs MESFET for millimeter-wave systems", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 151417 (1 December 1990); doi: 10.1117/12.2301453; https://doi.org/10.1117/12.2301453
PROCEEDINGS
3 PAGES


SHARE
Back to Top