1 December 1990 Complex refractive indices of silicon crystals with various carrier concentrations in the millimeter and submillimeter wave regions
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Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15141Y (1990) https://doi.org/10.1117/12.2301480
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States
Abstract
We have constracted a Mach-Zehnder type interferometric spectrometer in the millimeter wave region (75 - 170 GHz) to measure optical constants of solids. Using this spectrometer, we have measured complex refractive indices of silicon crystals with various resistivities (1 - 300 Ω -cm). The density and relaxation time of carriers are determined by the experimental dispersion of the refractive indices using the Drude model. The refractive indices in this region are compared with those measured by the far infrared Fourier spectrometer.
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Masanori Hangyo, Masanori Hangyo, } "Complex refractive indices of silicon crystals with various carrier concentrations in the millimeter and submillimeter wave regions", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15141Y (1 December 1990); doi: 10.1117/12.2301480; https://doi.org/10.1117/12.2301480
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