1 December 1990 Investigation of techniques for minimizing resistivity of thin metallic films at submillimeter wavelengths
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Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 151421 (1990) https://doi.org/10.1117/12.2301483
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States
Abstract
Experimental investigations of the substrate deposition temperature and annealing temperature influence on aluminum films deposited on diamond substrates were conducted. Tests were performed at direct current and at 101.55 GHz. Minimum resistivity levels, near theoretical predictions, occurred for deposition temperatures in the range of 50-160°C and for peak annealing temperatures of 100-120°C. Both colder and hotter substrate temperatures resulted in larger resistivity levels.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. S. Schieuer, K. S. Schieuer, } "Investigation of techniques for minimizing resistivity of thin metallic films at submillimeter wavelengths", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 151421 (1 December 1990); doi: 10.1117/12.2301483; https://doi.org/10.1117/12.2301483
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