1 December 1990 Application of IR-magneto optics and optics for the determination of doping profiles in semiconductors
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Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15142Z (1990) https://doi.org/10.1117/12.2301517
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States
Abstract
A physical model is presented for the non - destructive determination of free carrier density profiles. The accuracy of the method with respect to quantitatively determine the profile function is enhanced by using the asymmetrical IR - reflectivity and the IR - transmission as well as 6 different measurable differential magnetooptical interference effects caused by the same free carrier profile. The results are compared with other methods used to determine profile functions such as SIMS, spreading resistance, Rutherford backscattering and stripping Hall measurements.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Nies, R. Nies, } "Application of IR-magneto optics and optics for the determination of doping profiles in semiconductors", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15142Z (1 December 1990); doi: 10.1117/12.2301517; https://doi.org/10.1117/12.2301517
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