1 December 1990 Saturation of photoionization of shallow acceptors in p-Ge
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Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 151431 (1990) https://doi.org/10.1117/12.2301519
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States
Abstract
The free carrier recombination in high-purity p-Ge was investigated by FIR saturation spectroscopy of photoionization. The results were analyzed in terms of a kinetic model yielding the saturation intensity and the recombination time.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Jungwirt, G. Jungwirt, } "Saturation of photoionization of shallow acceptors in p-Ge", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 151431 (1 December 1990); doi: 10.1117/12.2301519; https://doi.org/10.1117/12.2301519
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