1 December 1990 Performance of GaAs Schottky barrier diodes as mixer in the THz range
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Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15143F (1990) https://doi.org/10.1117/12.2301533
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States
Abstract
GaAs Schottky barrier diodes with subrnicron anode diameter and high epitaxial layer doping were used as mixer up to 2.5THz. First, mixer performance was investigated measuring system noise temperature versus local oscillator power at different frequencies. Second, two lasers were taken as local oscillator and signal, respectively. Signals at the difference frequency and at two higher harmonics were generated. The power of the mixing signal was measured as a function of bias current. The behaviour of the higher harmonics was unusual. The extreme case was a sharp dip of more than 20 dB and a 3 dB width of only 30 μA.
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R. U. Titz, R. U. Titz, } "Performance of GaAs Schottky barrier diodes as mixer in the THz range", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15143F (1 December 1990); doi: 10.1117/12.2301533; https://doi.org/10.1117/12.2301533
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