1 December 1990 A monolithic 60 GHz multistage InGaAs HEMT low noise amplifier
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Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15144N (1990) https://doi.org/10.1117/12.2301577
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States
Abstract
A Millimeter Wave Monolithic Amplifier has been developed. The two stage low noise amplifier design is based on noise/gain models developed for pseudomorhpic (InGaAs) HEMTs. The simulation of the design indicates greater than 12 dB of gain with a noise figure near 3 dB. The operating band covers the oxygen attenuation bands near 60 GHz.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leonard Shaw, "A monolithic 60 GHz multistage InGaAs HEMT low noise amplifier", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15144N (1 December 1990); doi: 10.1117/12.2301577; https://doi.org/10.1117/12.2301577
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