1 December 1990 A monolithic 60 GHz multistage InGaAs HEMT low noise amplifier
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Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15144N (1990) https://doi.org/10.1117/12.2301577
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States
Abstract
A Millimeter Wave Monolithic Amplifier has been developed. The two stage low noise amplifier design is based on noise/gain models developed for pseudomorhpic (InGaAs) HEMTs. The simulation of the design indicates greater than 12 dB of gain with a noise figure near 3 dB. The operating band covers the oxygen attenuation bands near 60 GHz.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leonard Shaw, Leonard Shaw, } "A monolithic 60 GHz multistage InGaAs HEMT low noise amplifier", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15144N (1 December 1990); doi: 10.1117/12.2301577; https://doi.org/10.1117/12.2301577
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