1 December 1990 Electron properties in GaAs for the design of mm-wave IMPATTs
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Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15145Q (1990) https://doi.org/10.1117/12.2301616
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States
Abstract
A very staightforward method has been developed to apply space-charge resistance measurements for determining the high-field drift velocity of electrons in GaAs. The breakdown voltages of the single-drift flat-profile IMPATT diodes used in these measurements justify the validity of well known ionization rates for still higher electric fields.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heribert Eisele, Heribert Eisele, } "Electron properties in GaAs for the design of mm-wave IMPATTs", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15145Q (1 December 1990); doi: 10.1117/12.2301616; https://doi.org/10.1117/12.2301616
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