1 December 1990 L-T selections rules for transitions between exciton (biexciton) subbands in direct-gap semiconductors
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Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15145U (1990) https://doi.org/10.1117/12.2301620
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States
Abstract
The selections rules for transitions between exciton (biexciton) states in crystals taking into consideration their L - T splitting are considered. It is shown that twiced number of exciton states (electroand magneto-similar), contrary to known theory, exists. The spectra of stimulated FIR radiation on excitonic transitions in CdS,previously obtained experimentally, well fit to these selection rules.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. K. Vlasov, G. K. Vlasov, } "L-T selections rules for transitions between exciton (biexciton) subbands in direct-gap semiconductors", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15145U (1 December 1990); doi: 10.1117/12.2301620; https://doi.org/10.1117/12.2301620
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