A three-region analytical model for InP MISFETs operating in the millimeter-wave regime

Faquir C. Jain

doi:10.1117/12.2301674

12 December 2017 A three-region analytical model for InP MISFETs operating in the millimeter-wave regime

Faquir C. Jain

Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15147C (2017) https://doi.org/10.1117/12.2301674
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States

Abstract

Metal-Si0₂-InP Field effect transistors (MISFETs) for the millimeter-wave systems have been analytically analyzed using a two-dimensional three-region analytical model. The surface potential and other device parameters are numerically computed. The electrical characteristics are compared with the experimental results reported in the literature for transistors operating at about 40 GHz.

Citation Download Citation

Faquir C. Jain "A three-region analytical model for InP MISFETs operating in the millimeter-wave regime", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15147C (12 December 2017); https://doi.org/10.1117/12.2301674

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