1 November 1991 Amorphous silicon periodic and quasi-periodic superlattices
Author Affiliations +
Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47190
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The a-Si:H based compositional periodic and quasiperiodic superlattices (SLs) have been investigated by low-angle x-ray diffraction, Auger electron spectrum (AES), and cross-section TEM micrograph experiments. We show that most of the structures have sharp and smooth interfaces to better than 6 angstrom. The results also indicate that the peculiarities of quasiperiodic a-Si:H SLs are very different from those of periodic structures. The quantum size effects in a-Si:H SLs has been verified by the wavelength differential absorption (WDA) spectrum measurements.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kun-Ji Chen, Kun-Ji Chen, Jia Fang Du, Jia Fang Du, Zhifeng Li, Zhifeng Li, Jun Xu, Jun Xu, Jian Gong Jiang, Jian Gong Jiang, Duan Feng, Duan Feng, Hellmut Fritzsche, Hellmut Fritzsche, } "Amorphous silicon periodic and quasi-periodic superlattices", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47190; https://doi.org/10.1117/12.47190
PROCEEDINGS
8 PAGES


SHARE
Back to Top