1 November 1991 Amorphous silicon thin film x-ray sensor
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991); doi: 10.1117/12.47313
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
Three kinds of amorphous silicon x-ray sensors have been developed. The structures together with some basic characteristics of these sensors are reported. As an example of application, some operational tests for x-ray computed tomography (XCT) have been carried out. The results show that these sensors may provide a variety of potential applications in medical, scientific, and industrial fields.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guang-Pu Wei, "Amorphous silicon thin film x-ray sensor", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47313; https://doi.org/10.1117/12.47313
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KEYWORDS
Sensors

Silicon

X-rays

Silicon carbide

Thin films

Amorphous silicon

Physics

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