1 November 1991 Application of AlGaAs/GaAs superlattice for negative-differential-resistance transistor
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47294
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
A novel functional resonant-tunneling bipolar transistor (RBT) has been fabricated and demonstrated. In the proposed device, electrons are injected from emitter to base by resonant- tunneling through the minibands in the i-AlGaAs/n+-GaAs superlattice. The main features of the proposed device is the significant double negative-differential-resistance (NDR). Two high peak-to-valley current ratios of 4:1 and 2.6:1 were obtained at 77 K. In the transistor operation, a common-emitter current gain of 60 and a collector offset voltage smaller than more than 0.2 V at 77 K were obtained. As control base current increases sufficiently to cause the base-emitter junction drop beyond flat-band condition, two different transistor action regions with smaller current gains of 38 and 35 are found, respectively. Furthermore, the first peak current is nearly equal to the second peak current and much larger than the second valley current. Therefore, it is attractive to exploit the device in multiple- valued logic circuits and frequency multiplier.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen-Chau Liu, Wen-Chau Liu, W. S. Lour, W. S. Lour, C. Y. Sun, C. Y. Sun, Yung-Chun Lee, Yung-Chun Lee, D. F. Guo, D. F. Guo, } "Application of AlGaAs/GaAs superlattice for negative-differential-resistance transistor", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47294; https://doi.org/10.1117/12.47294
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