1 November 1991 Applications of GaAs grade-period doping superlattice for negative-differential-resistance device
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47295
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The characteristics of a GaAs graded-period (delta) -doped superlattice grown by molecular beam epitaxy were studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurred both at 300 K and 77 K. Besides, a two-state avalanche multiplication process, i.e., a middle quasi-stable region is seen at 77 K. Finally, there is an interesting hysteresis phenomenon due to the trapped holes created by the avalanche multiplications. The significant control voltage ratio, Vs/V(Eta) , of the studied structure introduces a good potential for application on the switching field.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen-Chau Liu, Wen-Chau Liu, C. Y. Sun, C. Y. Sun, W. S. Lour, W. S. Lour, D. F. Guo, D. F. Guo, Yung-Chun Lee, Yung-Chun Lee, } "Applications of GaAs grade-period doping superlattice for negative-differential-resistance device", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47295; https://doi.org/10.1117/12.47295
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