1 November 1991 Boron depth profiles in a-Si1-xCx:H(B) films after thermal annealing
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47205
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
B-doped hydrogenated amorphous silicon-carbon [a-Si C:H(B)] film is an important photovoltaic material owing to its wide band gap. During the past years it has attracted much attention and has been used in some devices such as solar cells. At present, however, there have been few reports of detailed results about the thermal stability of a-Si1-xCx:H(B) films. Therefore, the determination of boron depth profiles in these films after thermal annealing and related properties are of interest. In this report, the measurements of B depth profiles in p-layer of a-Si:H/a-Si1-xCx:H(B)/a-Si:H films after thermal annealing at various temperatures Ta were carried out by using B(p,(alpha) )8 Be resonant reaction at Ep equals 163 keV. The distribution shapes of boron concentration in these films and some characteristics are presented.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Changgeng Liao, Zhi Hao Zheng, Yong Qiang Wang, Sheng Sheng Yang, "Boron depth profiles in a-Si1-xCx:H(B) films after thermal annealing", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47205; https://doi.org/10.1117/12.47205
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