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1 November 1991 Characterization and preparation of high-Tc YBa2Cu3O7-x thin films on Si with conducting indium oxide as a buffer layer
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47316
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The superconducting YBCO thin films have been successfully prepared by DC magnetion sputtering on silicon substrates with a metallic conductive oxide In2O3 as a buffer layer. The substrate temperature was kept at about 650 degree(s)C during deposition and a subsequent in-situ annealing in oxygen was performed at 450 degree(s)C. The YBCO film on In2O3/Si exhibits zero resistance at 72 degree(s) K. The interface between Si and In2O3 was tested by Rutherford back scattering (RBS) and the characteristics of the YBCO thin films were also examined by x-ray diffraction (XRD).
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. J. Zhang, Wei Luo, Y. Y. Zeng, N. P. Yang, Y. M. Cai, X. L. Shen, H. S. Chen, and Zhongyi Hua "Characterization and preparation of high-Tc YBa2Cu3O7-x thin films on Si with conducting indium oxide as a buffer layer", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47316
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