1 November 1991 Characterization of GaAs thin films grown by molecular beam epitaxy on Si-on-insulator
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47213
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The direct growth of GaAs by molecular-beam epitaxy (MBE) on silicon-on-insulator (SOI) structure is presented. Rutherford backscattering and channeling (RBS/C), transmission electron microscope (TEM), and infrared (IR) reflection measurements have been employed to characterize the GaAs thin films. RBS/C results show that there is considerable lattice disorder at the GaAs-Si interface, but the crystal quality of the GaAs thin films improves remarkably toward GaAs surface for thicker films where the minimum channeling yield drops to 10% IR reflection spectra in the wavenumber range 1500 - 5000 cm-1 were measured for GaAs thin films on SOI. Interference fringes observed in IR reflection spectra also prove that the crystalline GaAs thin films have been deposited on SOI substrates. By computer simulation of the IR reflection interference spectra refractive index profiles of the GaAs/SOI structures were obtained.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen Hua Zhu, Chenglu Lin, Yue Hui Yu, Aizhen Li, Shichang Zou, and Peter L. F. Hemment "Characterization of GaAs thin films grown by molecular beam epitaxy on Si-on-insulator", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47213; https://doi.org/10.1117/12.47213
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